FQN1N50CTA
Manufacturer:
On Semiconductor
Mfr.Part #:
FQN1N50CTA
Datasheet:
Description:
MOSFETs TO-92-3 Through Hole N-Channel number of channels:1 890 mW 500 V Continuous Drain Current (ID):380 mA 6.4 nC
| Parameter | Value |
|---|---|
| Length | 5.2 mm |
| Width | 4.19 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 6 Ω |
| Height | 5.33 mm |
| Packaging | Ammo Pack |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Weight | 0.24 g |
| Number of Elements | 1 |
| Lifecycle Status | Production (Last Updated: 5 months ago) |
| Max Power Dissipation | 236 mW |
| Power Dissipation | 890 mW |
| Threshold Voltage | 4 V |
| Number of Channels | 1 |
| Input capacitance | 265 pF |
| Continuous Drain Current (ID) | 380 mA |
| Rds On Max | 173 mΩ |
| Drain to Source Voltage (Vdss) | 500 V |
| Turn-On Delay Time | 10 ns |
| Turn-Off Delay Time | 20 ns |
| Element Configuration | Single |
| Rise Time | 10 ns |
| Gate Charge | 6.4 nC |
| Drain to Source Resistance | 4.6 Ω |
| Gate to Source Voltage (Vgs) | 30 V |
| Drain to Source Breakdown Voltage (Vds) | 500 V |
| Schedule B | 8541210080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 5 months ago) |
| Gate to Source Threshold Voltage | 2 V |
| FET Type(Transistor Polarity) | N-Channel |
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